Calibration of frictional forces in atomic force microscopy

The atomic force microscope can provide information on the atomic-level frictional properties of surfaces, but reproducible quantitative measurements are difficult to obtain. Parameters that are either unknown or difficult to precisely measure include the normal and lateral cantilever force constants (particularly with microfabricated cantilevers), the tip height, the deflection sensor response, and the tip structure and composition at the tip-surface contact. We present an in situ experimental procedure to determine the response of a cantilever to lateral forces in terms of its normal force response. This procedure is quite general. It will work with any type of deflection sensor and does not require the knowledge or direct measurement of the lever dimensions or the tip height. In addition, the shape of the tip apex can be determined. We also discuss a number of specific issues related to force and friction measurements using optical lever deflection sensing. We present experimental results on the lateral force response of commercially available V-shaped cantilevers. Our results are consistent with estimates of lever mechanical properties using continuum elasticity theory

Lateral stiffness: A new nanomechanical measurement for the determination of shear strengths with friction force microscopy

We present a technique to measure the lateral stiffness of the nanometer-sized contact formed between a friction force microscope tip and a sample surface. Since the lateral stiffness of an elastic contact is proportional to the contact radius, this measurement can be used to study the relationship between friction, load, and contact area. As an example, we measure the lateral stiffness of the contact between a silicon nitride tip and muscovite mica in a humid atmosphere (55% relative humidity) as a function of load. Comparison with friction measurements confirms that friction is proportional to contact area and allows determination of the shear strength

Local formation of nitrogen-vacancy centers in diamond by swift heavy ions

We exposed nitrogen-implanted diamonds to beams of swift uranium and gold ions (~1 GeV) and find that these irradiations lead directly to the formation of nitrogen vacancy (NV) centers, without thermal annealing. We compare the photoluminescence intensities of swift heavy ion activated NV- centers to those formed by irradiation with low-energy electrons and by thermal annealing. NV- yields from irradiations with swift heavy ions are 0.1 of yields from low energy electrons and 0.02 of yields from thermal annealing. We discuss possible mechanisms of NV-center formation by swift heavy ions such as electronic excitations and thermal spikes. While forming NV centers with low efficiency, swift heavy ions enable the formation of three dimensional NV- assemblies over relatively large distances of tens of micrometers. Further, our results show that NV-center formation is a local probe of (partial) lattice damage relaxation induced by electronic excitations from swift heavy ions in diamond.Comment: to be published in Journal of Applied Physic

Measurement of interfacial shear (friction) with an ultrahigh vacuum atomic force microscope

We have studied the variation of frictional force with externally applied load for a Pt-coated atomic force microscope tip in contact with the surface of mica cleaved in ultrahigh vacuum. At low loads, the frictional force varies with load in almost exact proportion to the area of contact as predicted by the Johnson-Kendall-Roberts (JKR) theory [K. L. Johnson, K. Kendall, and A. D. Roberts, Proc. R. Sec. London Ser. A 324, 301 (1971)] of elastic adhesive contacts. The friction-load relation for a deliberately modified tip shape was proportional to an extended JKR model that predicts the area-load relation for nonparabolic tips, The tip shape was determined experimentally with a tip imaging technique and was consistent with the predicted friction behavior. This demonstrates that the frictional force is proportional to the area of contact between the tip and sample. Using the JKR/extended JKR model, interfacial surface energies and shear strengths can be estimated

A variable temperature ultrahigh vacuum atomic force microscope

A new atomic force microscope (AFM) that operates in ultrahigh vacuum (UHV) is described. The sample is held fixed with spring clamps while the AMF cantilever and deflection sensor are scanned above it. Thus, the sample is easily coupled to a liquid nitrogen cooled thermal reservoir which allows AFM operation from ≈ 100 K to room temperature. AFM operation above room temperature is also possible. The microscope head is capable of coarse x-y positioning over millimeter distances so that AFM images can be taken virtually anywhere upon a macroscopic sample. The optical beam deflection scheme is used for detection, allowing simultaneous normal and lateral force measurements. The sample can be transferred from the AFM stage to a low energy electron diffraction/Auger electron spectrometer stage for surface analysis. Atomic lattice resolution AFM images taken in UHV are presented at 110, 296, and 430 K

Effects of low energy electron irradiation on formation of nitrogen-vacancy centers in single-crystal diamond

Exposure to beams of low energy electrons (2 to 30 keV) in a scanning electron microscope locally induces formation of NV-centers without thermal annealing in diamonds that have been implanted with nitrogen ions. We find that non-thermal, electron beam induced NV-formation is about four times less efficient than thermal annealing. But NV-center formation in a consecutive thermal annealing step (800C) following exposure to low energy electrons increases by a factor of up to 1.8 compared to thermal annealing alone. These observations point to reconstruction of nitrogen-vacancy complexes induced by electronic excitations from low energy electrons as an NV-center formation mechanism and identify local electronic excitations as a means for spatially controlled room-temperature NV-center formation

Electrically driven photon emission from individual atomic defects in monolayer WS2.

Quantum dot-like single-photon sources in transition metal dichalcogenides (TMDs) exhibit appealing quantum optical properties but lack a well-defined atomic structure and are subject to large spectral variability. Here, we demonstrate electrically stimulated photon emission from individual atomic defects in monolayer WS2 and directly correlate the emission with the local atomic and electronic structure. Radiative transitions are locally excited by sequential inelastic electron tunneling from a metallic tip into selected discrete defect states in the WS2 bandgap. Coupling to the optical far field is mediated by tip plasmons, which transduce the excess energy into a single photon. The applied tip-sample voltage determines the transition energy. Atomically resolved emission maps of individual point defects closely resemble electronic defect orbitals, the final states of the optical transitions. Inelastic charge carrier injection into localized defect states of two-dimensional materials provides a powerful platform for electrically driven, broadly tunable, atomic-scale single-photon sources

Atomic Force Microscopy Study of an Ideally Hard Contact: The Diamond(111)/Tungsten Carbide Interface

A comprehensive nanotribological study of a hydrogen-terminated diamond(111)/tungsten carbide interface has been performed using ultrahigh vacuum atomic force microscopy. Both contact conductance, which is proportional to contact area, and friction have been measured as a function of applied load. We demonstrate for the first time that the load dependence of the contact area in UHV for this extremely hard single asperity contact is described by the Derjaguin-Müller-Toporov continuum mechanics model. Furthermore, the frictional force is found to be directly proportional to the contact area